ds30375 rev. 4 - 2 1 of 5 DMN3410 www.diodes.com DMN3410 n-channel enhancement mode field effect transistor features low gate threshold voltage ultra low on-resistance low input/output capacitance low input/output leakage fast switching speed maximum ratings @ t a = 25 c unless otherwise specified characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 12 v drain current (note 1) continuous t a = 25 c t a = 70 c i d 4 3.4 a pulsed drain current (note 3) i dm 15 a total power dissipation (note 1) p d 1.3 w thermal resistance, junction to ambient (note 1) t 10s r ja 90 c/w operating and storage temperature range t j ,t stg -55 to +150 c case: sc-59, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 terminal connections: see diagram marking: a2, see page 5 weight: 0.008 grams (approx.) ordering information, see page 5 mechanical data t c u d o r p w e n note: 1. per mounting conditions described in note 2. 2. the value of r ja is measured with the device mounted on 1 in 2 fr-4 pc board with 2 oz. copper, in a still air environment at t a = 25 c. the current rating is based on the t 10s thermal resistance rating. 3. repetitive rating, pulse width limited by junction temperature. a m j l f d b c h k g top view d g s source gate d ra i n sc-59 dim min max a 0.35 0.50 b 1.50 1.70 c 2.70 3.00 d 0.95 nominal g 1.90 nominal h 2.90 3.10 j 0.013 0.10 k 1.00 1.30 l 0.35 0.55 m 0.10 0.20 0 8 all dimensions in mm
ds30375 rev. 4 - 2 2 of 5 DMN3410 www.diodes.com characteristic symbol min typ max unit test condition static parameters drain-source breakdown voltage bv dss 30 v i d = 250 a, v gs = 0v zero gate voltage drain current t j = 25 c t j = 55 c i dss 1 5 a v ds = 24v, v gs = 0v gate-body leakage current i gss 100 na v ds = 0v, v gs = +12v gate threshold voltage v gs(th) 0.6 1 1.4 v v ds = v gs , i d = 250 a on state drain current i d (on) 10 a v gs = 4.5v, v ds = 5v static drain-source on-resistance r ds (on) 45 55 83 55 70 110 m v gs = 10v, i d = 4a v gs = 4.5v, i d = 3a v gs = 2.5v, i d = 2a forward transconductance g fs 8 s v ds = 5v, i d = 4a diode forward voltage v sd 0.8 1 v i s = 1a, v gs = 0v maximum body-diode continuous current i s 2.5 a dynamic parameters input capacitance c iss 390 pf v gs = 0v, v ds = 15v, f = 1mhz output capacitance c oss 54.5 pf reverse transfer capacitance c rss 41 pf gate resistance r g 3 v gs = 0v, v ds = 0v, f = 1mhz switching parameters total gate charge q g 0.6 nc v gs = 4.5v, v ds = 15v, i d = 4a gate source charge q gs 1.38 nc gate drain charge q gd 4.34 nc turn-on delay time t d(on) 3.3 ns v gs = 10v, v ds = 15v, r l = 3.75 , r gen = 6 turn-on rise time t r 1 ns turn-off delay time t d(off) 21.7 ns turn-off fall time t f 2.1 ns body diode reverse recovery time t rr 12 ns i f = 4a, di/dt = 100a/ s body diode reverse recovery charge q rr 6.3 nc i f = 4a, di/dt = 100a/ s electrical characteristics @ t a = 25 c unless otherwise specified note: 4. the static characteristics in figures 1-6, 12, 14 are obtained using 80 s pulses, duty cycle 0.5% max. 5. these tests are performed with device mounted on 1 in 2 fr-4 pc board with 2 oz. copper, in a still air environment at t a = 25 c. the soa curve provides a single pulse rating. t c u d o r p w e n
ds30375 rev. 4 - 2 3 of 5 DMN3410 www.diodes.com t c u d o r p w e n 0 1 5 0 1 3 4 5 i , drain-source current (a) d v , drain-source voltage (v) ds fi g . 1 on-re g ion characteristics v = 2v gs v = 3v gs v = 10v gs v = 2.5v gs v = 4.5v gs 2 12 3 6 9 0 2 4 01 2.5 3 3.5 i drain-source current (a) d, v , gate-source voltage (v) gs fi g . 2 transfer characteristics 6 8 10 0.5 1.5 2 t = 125c j t = 25c j 0.8 1 1.2 050 125 150 175 normalized on-resistance t , junction temperature (oc) j fi g . 4 on-resistance vs. junction temperature 1.4 1.6 1 . 8 25 75 100 v = 4.5v gs v =2.5v gs v =10v gs 0 25 50 02 68 10 i , drain current (a) d fi g . 3 on-resistance vs. drain current and gate volta g e 75 100 125 150 4 v = 2.5v gs v = 10v gs v = 4.5v gs 0.0 0.4 0.8 1.0 1.2 i reverse drain current (a) s, v body diode forward voltage (v) sd, fig. 6 body-diode forward voltage variation with source current and tem p erature 1 . 0 e+ 01 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-05 1.0e-04 1.0e-06 0.2 0.6 t = 25c j t = 125c j 0 200 0 2 6 8 10 v , gate-source voltage (v) gs fig. 5 on-resistance vs. gate-source voltage i = 2a d 4 50 100 150 t = 125c j t = 25c j
ds30375 rev. 4 - 2 4 of 5 DMN3410 www.diodes.com 0.1 1.0 10.0 100.0 0.1 1 10 100 v drain-source voltage (v) ds, fig. 9 maximum forward biased safe operating area (note 5) i , drain c urrent ( a ) d t=25 c a t=150 c j(max) 1ms dc r limited ds(on) 0.1s 1s 10s 10ms 0 5 0 1 3 4 5 v , gate-source voltage (v) gs q gate charge (nc) g, fi g . 7 gate-char g e characteristics v = 15v ds i = 4a d 2 4 1 2 3 0 100 200 300 400 0 5 capacitance (pf) v , drain-source voltage (v) ds fi g . 8 capacitance characteristics 500 600 10 15 25 20 30 crss ciss coss f= 1mhz 5 0 10 15 20 0.001 0.01 0.1 1 10 1000 100 p peak transient power (w) pk, pulse width (s) fig. 10 single pulse power rating junction-to ambient ( note 5 ) t = 150 c j(max) t=25 c a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) fi g . 11 normalized maximum transient thermal impedance 1000 t on t off p d in descending order d = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t c u d o r p w e n
ds30375 rev. 4 - 2 5 of 5 DMN3410 www.diodes.com marking information a2wxy ordering information (note 6) device packaging shipping DMN3410-7 sc-59 3000/tape & reel notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. t c u d o r p w e n code www w year 2002 2003 2004 2005 year code key week 36 - 37 38 - 39 40 - 41 42 - 43 44 - 45 46 - 47 48 - 49 50 - 51 52 - 53 code vxy z 1 2 345 week 18 - 19 20 - 21 22 - 23 24 - 25 26 - 27 28 - 29 30 - 31 32 - 33 34 - 35 code klno p r stu week 0 - 1 2 - 3 4 - 5 6 - 7 8 - 9 10 - 11 12 - 13 14 - 15 16 - 17 code abcd e f gh j week code key a2 = product type marking code w = week and year code marking xy = lot code marking y = assembly location, diodes china
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